Samsung has successfully developed a working prototype of the successor to the high density NOR flash that is used in many gadgets these days as the main memory device. The replacement ought to take place within the next decade. The
unveiled device was the 512 Megabit version and has been dubbed PRAM - Phase-change Random Access Memory. PRAM marries the advantage of traditional RAM as well as the non-volatile qualities of flash memory for storage, hence the nickname Perfect RAM. PRAM works at a breakneck speed since it is able to rewrite data without having first erase data previously accumulated, and is rated to be 30 times faster than current flash memory. It is also widely expected to last 10 times longer than flash memory thanks to its durability. Expect to see PRAM being popular in future devices such as multi-functional cellphones as well as other mobile devices.Pros : 30 times faster than current flash memory, 10 times more durable
Cons : Still under prototype development
Samsung unveils perfect RAM Source
Comment Preview