Intel Corp. joined forces with one of the world's leading providers of advanced semiconductor solutions - Micron Technology Inc. - to develop new high speed NAND technology. In their efforts to create a faster NAND flash memory, the two companies have obtain a five time faster technology than conventional NAND. To give you an idea, the new NAND offers up to 200 MB/s for reading data and 100 MB/s for writing data while the old one is limited to 40 MB/s for reading data and less than 20 MB/s for writing data.
The performance was obtained by leveraging the new ONFI 2.0 specification and a four-plane architecture with higher clock speeds.
"At up to five times the performance over conventional NAND, the high speed NAND from Intel and Micron, based on the ONFi 2.0 industry standard, will enable new embedded solutions and removable solutions that take advantage of high–performance system interfaces, including PCIe and upcoming standards such as USB 3.0," said Pete Hazen, director of marketing, Intel NAND Products Group.
The new high speed NAND has various advantages. It will be used with hybrid hard drives, for high-definition digital cameras and camcorders, and with the coming USB 3.0. The last one is expected to deliver speeds up to ten times faster than the USB 2.0 or approximately achieving 4.8 GB/s. Moreover the costs for NAND memory decrease and that means less dollars per gigabit.
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